Si4712/13-B30
4
Rev. 1.1
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Supply Voltage
V
DD
2.7
5.5
V
Interface Supply Voltage
V
IO
1.5
3.6
V
Power Supply Powerup Rise Time V
DDRISE
10
祍
Interface Supply Powerup Rise
Time
V
IORISE
10
祍
Ambient Temperature
T
A
20
25
85
癈
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at V
DD
= 3.3 V and 25 癈 unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
Symbol
Value
Unit
Supply Voltage
V
DD
0.5 to 5.8
V
Interface Supply Voltage
V
IO
0.5 to 3.9
V
Input Current
3
I
IN
10
mA
Input Voltage
3
V
IN
0.3 to (V
IO
+ 0.3)
V
Operating Temperature
T
OP
40 to 95
癈
Storage Temperature
T
STG
55 to 150
癈
RF Input Level
4
0.4
V
PK
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
2. The Si4712/13 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV
HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
3. For input pins SCLK, SEN, SDIO, RST, RCLK, DCLK, DFS, DIN, GPO1, GPO2/INT
, and GPO3.
4. At RF input pin, TXO.
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